Enhancement of concentration of XeV and GeV centers in microcrystalline diamond films through He+ irradiation

Atomic defect centers in diamond have been widely exploited numerous quantum applications like information, sensing, photonics and so on. In this context, there is always a requirement to improve optimize the preparation procedure generate controlled fashion, explore new which can potential overcome current technological challenges. Through work we report enhancing concentration of Ge Xe vacancy microcrystalline (MCD) by means He+ irradiation. We demonstrated growth MCD chemical vapor deposition (CVD) implantation ions into CVD-grown samples. MCDs were irradiated with characterized through optical spectroscopy measurements. Recorded photoluminescence results revealed clear signature enhancement Xe-related vacancies MCDs.